Influence of High-κ Spacer on Analog/RF Performance of Asymmetric Underlap Double Gate MOSFET
نویسندگان
چکیده
Impact of high-κ spacer in Asymmetric underlap double gate MOS transistor is systematically investigated with the help of a two dimensional device simulator. A significant improvement in ON current, transconductance and intrinsic gain is observed in the device using high-κ spacer material. However due to higher capacitances, device with high-κ spacer shows smaller unity gain cut-off frequency compared to low-κ spacer device. However degradation in RF FOM is insignificant compared to improvement in Analog FOMs. Keywords— Fringing capacitance, Gate underlap, Short channel effects, Transconductance, Unity gain cut-off frequency.
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